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| PD- 9.1558A IRL3103D1S FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l Co-packaged HEXFET(R) Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application D VDSS = 30V RDS(on) = 0.014 G ID = 64A S Description The FETKY family of co-packaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D 2 Pak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 64 45 220 3.1 89 0.56 16 -55 to + 150 300 (1.6mm from case ) Units A W W W/C V C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. --- --- Max. 1.4 40 Units C/W 4/2/98 IRL3103D1S MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Ciss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Min. 30 --- --- --- 1.0 23 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.037 --- --- --- --- --- --- --- --- --- --- --- 9.0 210 20 54 7.5 1900 810 240 3500 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.014 VGS = 10V, ID = 34A 0.019 VGS = 4.5V, ID = 28A --- V VDS = VGS , ID = 250A --- S VDS = 25V, ID = 34A 0.10 VDS = 30V, VGS = 0V mA 22 VDS = 24V, VGS = 0V, TJ = 125C 100 VGS = 16V nA -100 VGS = -16V 43 ID = 32A 14 nC VDS = 24V 23 VGS = 4.5V, See Fig. 6 --- VDD = 15V --- ID = 32A ns --- RG = 3.4, VGS =4.5V --- RD = 0.43 , Between lead, --- nH and center of die contact --- VGS = 0V --- VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 0V Body Diode & Schottky Diode Ratings and Characteristics Parameter IF (AV) I SM Min. Typ. Max. Units ( Schottky) Pulsed Source Current (Body Diode) Diode Forward Voltage Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time VSD1 VSD2 trr Qrr ton Conditions MOSFET symbol 2.0 --- --- showing the A integral reverse --- --- 220 p-n junction and Schottky diode. --- --- 1.3 V TJ = 25C, IS = 32A, VGS = 0V --- --- 0.50 V TJ = 25C, IS = 1.0A, VGS = 0V --- 51 77 ns TJ = 25C, IF = 32A --- 49 73 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) D G S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 ) ** Pulse width 300s; duty cycle 2%. Uses IRL3103D1 data and test conditions When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. IRL3103D1S 1000 TOP VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 1000 TOP 100 ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A ) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 100 10 10 2.5V 2.5V 1 0.1 1 2 0 s P U LS E W ID TH T J = 2 5C 10 100 A 1 0.1 1 20s PULSE WIDTH T J = 150C 10 A 100 V D S , D rain-to-S ource V oltage (V ) V D S , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 TOP I , Source-to-Drain Current (A) S 20 I , Source-to-Drain Current (A) S VGS B 10V 8.0V 6.0V 4.0V 2.0V BOTTOM 0.0V 30 TOP VGS 10V 8.0V 6.0V 4.0V 2.0V BOTTOM 0.0V 20 10 10 0.0V 0.0V 20s PULSE WIDTH T J = 150C 0 0.2 0.4 0.6 0.8 0 0.0 0.2 0.4 20s PULSE WIDTH TJ = 25C 0.6 0.8 1.0 A 0 A V S D , Source-to-Drain Voltage (V) V S D , Source-to-Drain Voltage (V) Fig 3. Typical Reverse Output Characteristics Fig 4. Typical Reverse Output Characteristics IRL3103D1S 4000 VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 15 ID = 32A V DS = 24V V DS = 15V 12 3000 C, Capacitance (pF) Ciss 2000 9 Coss 1000 6 3 Crss 0 1 10 100 0 0 20 40 60 80 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 70 1000 I D , Drain-to-Source Current (A) 60 I D , Drain Current (A) 50 TJ = 25C 100 40 T J = 150C 30 20 10 10 0 25 50 75 100 125 150 175 1 2.0 3.0 4.0 5.0 V D S = 15V 20s PULSE WIDTH 6.0 7.0 8.0 9.0 A TC , Case Temperature ( C) V G S , Gate-to-Source Voltage (V) Fig 7. Maximum Drain Current Vs. Case Temperature Fig 8. Typical Transfer Characteristics IRL3103D1S 2.0 R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e (N o rm alize d) I D = 56 A 1.5 1.0 0.5 0.0 -60 -40 -20 0 20 40 60 80 V G S = 1 0V 100 120 140 160 180 A T J , J unc tion T em perature (C ) Fig 9. Normalized On-Resistance Vs. Temperature 10 Th erm al R es pon se (Z th J C ) 1 D = 0.50 0 .2 0 0 .1 0 PD M 0.1 0.0 5 0 .0 2 0 .0 1 SING L E PU L SE (TH ER M A L RE S PO N SE ) N o te s: 1 . D u ty fa c to r D = t t 1 t2 1 / t2 0.01 0.00001 2 . P e a k TJ = P D M x Z th J C + T C A 1 0.0001 0.001 0.01 0.1 t 1 , R e ctan gular Pulse D uration (se c) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRL3103D1S D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 8.8 9 (.3 50 ) R E F. 1 0.16 (.4 00 ) RE F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM 0.5 5 (.022 ) 0.4 6 (.018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X Part Marking Information D2Pak IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK IRL3103D1S Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) 1 .60 (.06 3) 1 .50 (.05 9) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 ) F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 10 .9 0 (.42 9) 10 .7 0 (.42 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 16 .10 (.63 4 ) 15 .90 (.62 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) F E E D D IRE C TIO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079) 2 3.9 0 (.9 41) 4 33 0.00 (1 4.1 73) MA X. 60.00 (2.3 62) MIN . NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E . 26 .40 (1.03 9) 24 .40 (.961 ) 3 3 0.40 (1.1 97) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/98 |
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